GaN Devices
Gallium nitride (GaN)
Cassini ATE can ensure the reliable performance of GaN devices in various applications, by understanding these challenges and using the right testing methods.
Choosing the right Automated Test Equipment (ATE) for your application involves understanding the specific requirements of your semiconductor devices and the tests you need to perform. Cassini ATE include all the hardware (fast RF sources, accurate RF power amplifiers, and reliable high current and pulsed DC) coupled with robust development software and test data analysis tools needed to test GaN devices.
Testing Gallium Nitride (GaN) Devices
GaN devices are revolutionizing the power electronics industry with their superior performance over traditional silicon-based devices. However, testing these devices presents unique challenges and requires specialized instruments and measurements provided by Cassini ATE.
Applications for GaN Devices
Gallium Nitride (GaN) devices are revolutionizing various industries due to their superior performance over traditional silicon-based devices. GaN devices are popular in Power Supplies and Motor Controls for industrial, commercial, and even extremely stringent automotive applications. GaN devices have replaced silicon for Telecommunications and Autonomous Vehicles for their high efficiency and fast switching speed. GaN is perfect for Servers, AI technology, Robots, Drones and even Vacuum Cleaners due to their high power handling capabilities
Challenges in GaN Testing
- Device Characterization: GaN devices operate at significantly higher voltages and peak currents than traditional devices. This necessitates test instrumentation capable of characterizing these high-rated parameters
- Leakage Currents: GaN devices have far lower leakage than their silicon equivalents. This means that while there is a need for sourcing higher voltages in testing, there is also a need for greater current measurement sensitivity.
- Epitaxy of GaN Layers: One of the main obstacles remains the epitaxy of GaN layers on silicon substrate, the lattice mismatch, and the thermal coefficient of expansion mismatch between the two materials, which generates killer defects in the GaN layer.
Test Instruments for GaN Testing
- Double Pulse Switching Test: This test is used to characterize hard switching turn-on and turn-off.
- Eon/Eoff Measurement: This test is used to characterize the switching loss distribution.
- Current and Voltage Measurement Techniques: Fast current and voltage measurement techniques are needed for test results that accurately reflect the performance of GaN devices.
Consider the following when configuring Cassini ATE:
- Understand the operating voltage, current, frequency, and power levels for the Device.
- Identify the types of functional tests, structural tests, and parametric tests needed to stress and characterize an operational GaN device.
- RI TIMs can handle the high voltages and peak currents specifications of your device and the types of tests you need to perform without failing.
- Develop a unique test plan to differentiate your technology from the competition.
- Learn how to improve your device performance with detailed characterization data with intrinsic reliability testing to help you understand how to overcome inherent performance and failure issues.
- Negative Gate Supply & Fail safe in Device Interface & Return Protection for Instrumentation
- Conditional Test Aborting for Reverse Bias Sweep and PF Power Sweep
- High Speed Pulsed DC & RF (Characterization & QA Hardening/Stress)
- Layered Calibrated Paths (Per Setup) for Accuracy needed for Power Efficiency (PA), Power Added Efficiency (PAE)
- Full S-Parameter Coverage (calibrated paths)
- High Power
- High Voltage
- P1dB
- IM3
- Leakage Current
- Efficiency
- Multi-Site
- High Voltage Supply & Pulsing
- Gate Threshold/Cutoff Voltage
- Leakage Current
- Substrate Thermal Characterization
- Gate-to-Source & Gate-to-Drain Voltage
- Device Stress Testing
- DC source and measurement for device test
- Low speed static digital for managing test circuit configuration
- Pulsed 3 A current source and measure
- All dynamic features are synchronous
- Supports multi-site test
- 8x 250 mA 4 quadrant supplies
- 4x 3A single quadrant pulsed supplies
- 16 Low Speed Digital lines
- 8 Voltage Measure Lines
- 100 MHz to 6 GHz (usable to 20 GHz)
- -120 dBM to +22 dBm
- 1 Hz Resolution
- Provides a fully calibrated microwave path between the DUT board and the tester.
- Allows extension to multiple port structures via additional fixture.
- 4 Full Performance RF Ports with
- Full Vector Measurement up to 12 GHz
- Supports External Synthesizer
- Supports External Digital Modulated Synthesizer
- Supports External Receiver
- Cutting edge technology integrated with ATE capabilities
| Cassini Modular ATE for GaN Testing by RI | |
 | Modular Test Equipment for GaN Devices: |
Multiple TIMs can be configured per tester for maximum flexibility, like upgrading to multi-site testing!
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Multiple TIMs can be configured per tester for maximum flexibility.